Next-Generation SiC and GaN Inverters with Advanced Real-Time Adaptive Control

Abstract

Silicon Carbide (SiC) and Gallium Nitride (GaN) inverters deliver exceptional efficiency and high-speed switching, making them ideal for applications in electric vehicles, renewable energy systems, and aerospace. However, conventional control techniques, such as Pulse Width Modulation (PWM) and Proportional-Integral-Derivative (PID) controllers, often fail to address the dynamic thermal and electrical characteristics of these wide-bandgap devices. This paper proposes an advanced real-time adaptive control strategy tailored for SiC and GaN inverters, optimizing efficiency, stability, and fault tolerance through dynamic parameter tuning. Comprehensive simulations demonstrate that the proposed approach achieves a significantly reduced Integral of Time-weighted Absolute Error (ITAE) of 8449.83, compared to 14178.29 for PD and 14177.47 for P controllers, with faster response times and minimal overshoot. By mitigating switching losses and electromagnetic interference, this strategy enhances performance in high-frequency operations. This work lays a robust foundation for next-generation inverter designs, with future research focused on experimental validation and integration of hybrid control architectures.Control System